تحلیل محاسباتی نقش پروتون‌های کم‌انرژی در وقوع به‌هم‌ریختگی‌های تک‌حادثه‌ای بر یک حافظه SRAM با فن‌آوری 65 نانومتری CMOS
نویسندگان
چکیده
منابع مشابه
اثر بربرین در تنظیم آستروسیتهای Gfap+ ناحیه هیپوکمپ موشهای صحرایی دیابتی شده با استرپتوزوتوسین
Background: Diabetes mellitus increases the risk of central nervous system (CNS) disorders such as stroke, seizures, dementia, and cognitive impairment. Berberine, a natural isoquinolne alkaloid, is reported to exhibit beneficial effect in various neurodegenerative and neuropsychiatric disorders. Moreover astrocytes are proving critical for normal CNS function, and alterations in their activity...
متن کاملاثر بربرین در تنظیم آستروسیتهای Gfap+ ناحیه هیپوکمپ موشهای صحرایی دیابتی شده با استرپتوزوتوسین
Background: Diabetes mellitus increases the risk of central nervous system (CNS) disorders such as stroke, seizures, dementia, and cognitive impairment. Berberine, a natural isoquinolne alkaloid, is reported to exhibit beneficial effect in various neurodegenerative and neuropsychiatric disorders. Moreover astrocytes are proving critical for normal CNS function, and alterations in their activity...
متن کاملA new write assist technique for SRAM design in 65 nm CMOS technology
In this paper, a new write assist technique for SRAM arrays is proposed. In this technique, to improve the write features of the SRAM cell, a negative voltage is applied to one of the bitlines in the SRAM cell while another bitline is connected to a boosted voltage. Improved write features are attributed to the boosting scheme from both sides of the SRAM cell. This technique is applied to a 10T...
متن کاملA new asymmetric 6T SRAM cell with a write assist technique in 65 nm CMOS technology
A new asymmetric 6T-SRAM cell design is presented for low-voltage low-power operation under process variations. The write margin of the proposed cell is improved by the use of a new write-assist technique. Simulation results in 65 nm technology show that the proposed cell achieves the same RSNM as the asymmetric 5T-SRAM cell and 77% higher RSNM than the standard 6T-SRAM cell while it is able to...
متن کاملSub-threshold SRAM in 65nm CMOS
Previous efforts to reduce SRAM power have included voltage scaling to the edge of sub-threshold [2] or into the sub-threshold region [3], but only for idle cells. Although some published SRAMs operate at the edge of sub-threshold, none function at sub-threshold supply voltages compatible with logic operating at the minimum energy point. The 0.18μm memory in [4] provides one exception. Consisti...
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ژورنال
عنوان ژورنال: مجله علوم و فنون هسته ای
سال: 2020
ISSN: 2676-5861
DOI: 10.24200/nst.2020.1141